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| (R) STPS20170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF(max) Features 2 x 10 A 170 V 175C 0.75 V K A1 K A2 K High reverse voltage High junction temperature capability Avalanche specification with derating curves A2 K A1 A2 A1 TO-220AB STPS20170CT D2PAK STPS20170CG K Benefits Can challenge bipolar ultrafast diodes with better dynamic characteristics. A2 K A1 Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. A1 K A2 TO-220FPAB STPS20170CFP I2PAK STPS20170CR Table 2: Order Codes Part Numbers STPS20170CT STPS20170CFP STPS20170CR STPS20170CG STPS20170CG-TR Marking STPS20170CT STPS20170CFP STPS20170CR STPS20170CG STPS20170CG June 2005 REV. 2 1/8 STPS20170C Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) RMS forward voltage TO-220AB / IF(AV) Average forward current = 0.5 D2PAK / I2PAK TO-220FPAB Tc = 135C Tc = 155C Per diode Per device Per diode Per device Parameter Repetitive peak reverse voltage Value 170 30 10 20 10 20 180 6700 -65 to + 175 175 10000 Unit V A A IFSM PARM Tstg Tj dV/dt dPtot * : --------------dTj Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10ms sinusoidal tp = 1s Tj = 25C A W C C V/s < 1 ------------------------- thermal runaway condition for a diode on its own heatsink Rth ( j - a ) Table 4: Thermal Parameters Symbol Rth(j-c) Parameter TO-220AB / D2PAK / I2PAK Junction to case TO-220FPAB Rth(c) TO-220AB / D2PAK / I2PAK TO-220FPAB Per diode Total Per diode Total Coupling Value 2.2 1.3 4.5 3.5 0.3 2.5 C/W Unit When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 125C Tj = 25C VF ** Forward voltage drop Tj = 125C Tj = 25C Tj = 125C Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ Max. 15 15 0.90 Unit A mA VR = VRRM IF = 10A IF = 20A 0.69 0.79 0.75 0.99 0.86 V To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF (RMS) 2 2/8 STPS20170C Figure 1: Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Figure 2: Average forward current versus ambient temperature ( = 0.5, per diode) IF(AV)(A) 12 11 10 9 Rth(j-a)=Rth(j-c) (TO-220FPAB) Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK) = 0.05 = 0.1 = 0.2 = 0.5 =1 8 7 6 5 4 Rth(j-a)=15C/W T 3 2 T IF(AV)(A) =tp/T 10 tp 11 12 1 0 0 =tp/T 25 tp Tamb(C) 50 75 100 125 150 175 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1s) 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25C) 1.2 1 power 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 25 50 75 100 125 150 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK, I2PAK) IM(A) 150 Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220FPAB) IM(A) 100 90 125 80 70 TC=50C 100 60 50 TC=50C 75 TC=75C 40 30 TC=75C 50 IM TC=125C t 25 =0.5 20 10 0 IM t TC=125C t(s) 1.E-02 1.E-01 1.E+00 =0.5 t(s) 1.E-02 1.E-01 1.E+00 0 1.E-03 1.E-03 3/8 STPS20170C Figure 7: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 1.E+03 0.6 0.5 0.4 0.3 (TO-220FPAB) (TO-220AB, I PAK and D PAK) 2 2 Figure 8: Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(A) 1.E+05 Tj=175C 1.E+04 Tj=150C Tj=125C 1.E+02 Tj=100C 1.E+01 T 1.E+00 Tj=25C 0.2 Single pulse 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 1.E-01 1.E+00 0 25 50 75 VR(V) 100 125 150 175 Figure 9: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C Figure 10: Forward voltage drop versus forward current (per diode) IFM(A) 100.0 Tj=125C (maximum values) 10.0 Tj=125C (typical values) Tj=25C (maximum values) 100 1.0 VR(V) 10 1 10 100 1000 0.1 0.0 0.2 0.4 0.6 VFM(V) 0.8 1.0 1.2 1.4 1.6 1.8 Figure 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35m) (D2PAK) Rth(j-a)(C/W) 80 70 60 50 40 30 20 10 S(cm) 0 0 5 10 15 20 25 30 35 40 4/8 STPS20170C Figure 12: D2PAK Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8.95 9.35 0.352 0.368 10.00 10.40 0.393 0.409 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 2.40 3.20 0.094 0.126 0.40 typ. 0.016 typ. 0 8 0 8 REF. A E L2 C2 D L L3 A1 B2 B G A2 R C M * V2 * FLAT ZONE NO LESS THAN 2mm A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Figure 13: Foot Print Dimensions (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 5/8 STPS20170C Figure 14: I2PAK Package Mechanical Data DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Inches Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.195 0.394 0.512 0.138 0.050 Max. 0.181 0.107 0.035 0.067 0.028 0.052 0.368 0.106 0.203 0.409 0.551 0.155 0.055 A A1 b b1 c c2 D L1 L b1 A1 D e e1 E b e e1 c L L1 L2 Figure 15: TO-220FPAB Package Mechanical Data DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 REF. A H B Dia L6 L2 L3 L5 F1 L4 F2 D L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. 6/8 STPS20170C Figure 16: TO-220AB Package Mechanical Data REF. H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 2.40 2.70 0.094 0.106 10 10.40 0.393 0.409 16.4 typ. 0.645 typ. 13 14 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 Table 6: Ordering Information Ordering type STPS20170CT STPS20170CFP STPS20170CR STPS20170CG STPS20170CG-TR Marking STPS20170CT STPS20170CFP STPS20170CR STPS20170CG STPS20170CG Package TO-220AB TO-220FPAB I PAK D2PAK 2 Weight 2.20 g 2g 1.49 g 1.48 g Base qty 50 50 50 50 1000 Delivery mode Tube Tube Tube Tube Tape & reel Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N. Table 7: Revision History Date Mar-2004 28-Jul-2005 Revision 1 2 First issue. TO-220FPAB, I2PAK and D2PAK packages added. Description of Changes 7/8 STPS20170C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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